Method for applying a final metal layer for wafer level packaging and associated device
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United States of America Patent
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Mar 17, 2015
Grant Date -
Dec 12, 2013
app pub date -
Mar 7, 2013
filing date -
Jun 12, 2012
priority date (Note) -
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Abstract
A wafer level semiconductor device and manufacturing method including providing a semiconductor device wafer substrate having a backside, applying to the backside a conductive metallization layer, and applying to the backside over the conductive metallization layer a protective metal layer of titanium, titanium alloys, nickel, nickel alloys, chromium, chromium alloys, cobalt. cobalt alloys, palladium, and palladium alloys.
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