Boron doped single crystal diamond electrochemical synthesis electrode

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United States of America Patent

PATENT NO 8974599
APP PUB NO 20050109262A1
SERIAL NO

10977267

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Abstract

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Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described., as well as a system for use in performing such a method, and articles incorporating such a composition.

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Patent Owner(s)

Patent OwnerAddress
SCIO DIAMOND TECHNOLOGY CORPORATION109 THORNBLADE BOULEVARD GREER SC 29650

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Doering, Patrick J Holliston, US 39 496
Linares, Robert C Sherborn, US 48 534

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