Self-contained integrated circuit including adjacent cells of different types
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United States of America Patent
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Mar 3, 2015
Grant Date -
Mar 20, 2014
app pub date -
May 22, 2012
filing date -
May 24, 2011
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Abstract
An integrated circuit includes a stack having a semiconductor substrate with a first type of dopant, an UTBOX type buried insulating layer, electronic components, formed in the substrate, ground planes disposed beneath the buried insulating layer so as to be respectively plumb with corresponding components, wells with the first type of dopant, the wells being respectively beneath corresponding ground planes, and a bias circuit enabling distinct voltages to be applied to the ground planes by the wells. The wells are separated from the substrate by a deep well with a second type of dopant. The wells are separated from each other by a separating structure, which is either a lateral well having a second type of dopant or a block of insulating material.
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