Semiconductor device including a plurality of different functional elements and method of manufacturing the same
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United States of America Patent
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Feb 24, 2015
Grant Date -
Sep 24, 2009
app pub date -
Mar 17, 2009
filing date -
Mar 18, 2008
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Abstract
At least first and second Si1-xGex (0≦x≦1) layers are formed on an insulating film. At least first and second material layers are formed correspondingly to the at least first and second Si1-xGex (0≦x≦1) layers. A lattice constant of the first Si1-xGex (0≦x≦1) layer is matched with a lattice constant of the first material layer. A lattice constant of the second Si1-xGex (0≦x≦1) layer is matched with a lattice constant of the second material layer.
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