Fabrication of MEMS based cantilever switches by employing a split layer cantilever deposition scheme
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United States of America Patent
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Feb 17, 2015
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Jul 22, 2010
app pub date -
Jan 21, 2009
filing date -
Jan 21, 2009
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Abstract
Embodiments discussed herein generally disclose novel alternative methods that can be employed to overcome the gradient stress formed in refractory materials to be used for thin film MEMS cantilever switches. The use of a ‘split layer’ cantilever fabrication method, as described herein enables thin film MEMS cantilever switches to be fabricated resulting in low operating voltage devices while maintaining the mechanical rigidity of the landing portion of the final fabricated cantilever switch.
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