P-type graphene base transistor

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United States of America Patent

PATENT NO 8957404
APP PUB NO 20140027715A1
SERIAL NO

13721360

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Abstract

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A hot hole transistor with a graphene base comprises on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer.

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Patent Owner(s)

Patent OwnerAddress
IHP GMBHIM TECHNOLOGIEPARK 25 FRANKFURT 15236

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dabrowski, Jaroslaw Frankfurt, DE 9 86
Lemme, Max Hagen, DE 1 10
Lippert, Gunther Frankfurt, DE 13 147
Lupina, Grzegorz Berlin, DE 7 63
Mehr, Wolfgang Friedersdorf, DE 5 34
Scheytt, Johann Christoph Frankfurt, DE 10 55

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