Active area bonding compatible high current structures
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United States of America Patent
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Feb 3, 2015
Grant Date -
Apr 24, 2014
app pub date -
Dec 31, 2013
filing date -
Aug 21, 2003
priority date (Note) -
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Abstract
A semiconductor structure comprises a top metal layer, a bond pad formed on the top metal layer, a conductor formed below the top metal layer, and an insulation layer separating the conductor from the top metal layer. The top metal layer includes a sub-layer of relatively stiff material compared to the remaining portion of the top metal layer. The sub-layer of relatively stiff material is configured to distribute stresses over the insulation layer to reduce cracking in the insulation layer.
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