Copper interconnect structure and method for forming the same
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United States of America Patent
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Jan 27, 2015
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app pub date -
Aug 15, 2012
filing date -
Apr 13, 2012
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Abstract
A copper interconnect structure in a semiconductor device including an opening formed in a dielectric layer of the semiconductor device, the opening having sidewalls and a bottom. A first barrier layer is conformally deposited on the sidewalls and the bottom of the opening. A first seed layer is conformally deposited on the first barrier layer. A second barrier layer is conformally deposited on the first seed layer. A second seed layer is conformally deposited on the second barrier layer and a conductive plug is deposited in the opening of the dielectric layer.
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