Method and apparatus for EUV mask having diffusion barrier
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United States of America Patent
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Jan 20, 2015
Grant Date -
Aug 1, 2013
app pub date -
Mar 14, 2013
filing date -
Dec 2, 2010
priority date (Note) -
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Abstract
A photomask is provide. The photomask includes a substrate having a multi-layer stack disposed over the substrate. The multilayer stack has alternating first second and third layers disposed over each other, wherein the first, second and third layers are composed of first, second and third materials, respectively, and wherein at least the second layer is formed through an atomic layer deposition process. A capping layer is disposed over the multilayer stack; and an absorber layer disposed over the capping layer. A method for evaluating materials, unit processes, and process sequences for manufacturing a photomask is also provided.
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