Magnetic memory element and non-volatile storage device
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United States of America Patent
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Jan 6, 2015
Grant Date -
Oct 25, 2012
app pub date -
Aug 25, 2009
filing date -
Dec 2, 2008
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Abstract
The present invention provides a magnetic memory element that has a spin valve structure formed using a free layer, a non-magnetic layer, and a pinned layer. The free layer has a three-layer structure having a first magnetic layer, an intermediate layer, and a second magnetic layer arranged in this order viewed from the non-magnetic layer. The first magnetic layer is made of a ferromagnetic material. The intermediate layer is made of a non-magnetic material. The second magnetic layer is made of an N-type ferromagnetic material having a magnetic compensation point in the temperature range where a memory storage operation can be available. The magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer are parallel to each other at the temperature lower than the magnetic compensation point Tcomp.
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