Electrochemically-gated field-effect transistor, methods for its manufacture and use thereof
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United States of America Patent
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Jan 6, 2015
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Apr 24, 2013
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Apr 24, 2013
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Abstract
An electrochemically-gated field-effect transistor includes a source electrode, a drain electrode, a gate electrode, a transistor channel and an electrolyte. The transistor channel is located between the source electrode and the drain electrode. The electrolyte completely covers the transistor channel and has a one-dimensional nanostructure and a solid polymer-based electrolyte that is employed as the electrolyte.
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