Method of programming a multi-bit per cell non-volatile memory
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United States of America Patent
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Dec 30, 2014
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May 28, 2013
filing date -
Mar 21, 2011
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Abstract
A method of programming a multi-bit per cell non-volatile memory is disclosed. In one embodiment, the non-volatile memory is read to obtain a first data of a most-significant-bit (MSB) page on a current word line that succeeds in data reading, wherein the current word line follows a preceding word line on which data reading fails. At least one reference voltage is set. The MSB page on the current word line is secondly programmed with a second data according to the reference voltage, the second data being different from the first data.
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