Galvanically-isolated device and method for fabricating the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 30, 2014
Grant Date -
Jul 3, 2014
app pub date -
Dec 27, 2013
filing date -
Dec 28, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A galvanically-isolated device and a method for fabricating the same are provided. The galvanically-isolated device includes a lead frame including a first die-attach pad, a first lead and a second lead. A substrate is disposed on the first die-attach pad. A high-voltage semiconductor capacitor formed on the substrate includes an interconnection structure. The interconnection structure includes an inter-metal dielectric layer structure. A first plate, a second plate and a third plate are formed on the inter-metal dielectric layer structure, separated from each other. The first plate, the second plate and a first portion of the inter-metal dielectric layer structure are composed of a first capacitor. The first plate, the third plate and a second portion of the inter-metal dielectric layer structure are composed of a second capacitor connected in series with the first capacitor.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully