Method of manufacturing multi-wavelengths distributed feedback (DFB) laser array including top separate confinement layer having different thickness laser units on the quantum-well layer grown by selective area epitaxial growth

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United States of America Patent

PATENT NO 8921138
SERIAL NO

14011150

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Abstract

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A method for manufacturing a distributed feedback laser array includes: forming a bottom separate confinement layer on a substrate; forming a quantum-well layer on the bottom separate confinement layer; forming a selective-area epitaxial dielectric mask pattern on the quantum-well layer; forming a top separate confinement layer on the quantum-well layer through selective-area epitaxial growth using the selective-area epitaxial dielectric mask pattern, the top separate confinement layer having different thicknesses for different laser units; removing the selective-area epitaxial dielectric mask pattern; forming an optical grating on the top separate confinement layer; and growing a contact layer on the optical grating. The present disclosure achieves different emission wavelengths for different laser units without significantly affect emission performance of the quantum-well material.

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Patent OwnerAddress
INSTITUTE OF SEMICONDUCTORS CHINESE ACADEMY OF SCIENCES100083 NO 35 QINGHUA EAST ROAD BEIJING HAIDIAN DISTRICT BEIJING CITY BEIJING CITY 100083

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liang, Song Beijing, CN 10 72
Wang, Wei Beijing, CN 2815 17926
Zhang, Can Beijing, CN 172 404
Zhu, Hongliang Beijing, CN 8 8

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