Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements

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United States of America Patent

PATENT NO 8913350
SERIAL NO

12538489

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Abstract

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A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG SEMICONDUCTOR INC3655 NORTH FIRST STREET SAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Diao, Zhitao Fremont, US 47 2828
Tang, Xueti Fremont, US 50 1143
Watts, Steven M Mountain View, US 12 555

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