Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
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United States of America Patent
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Dec 16, 2014
Grant Date -
Aug 2, 2012
app pub date -
May 23, 2011
filing date -
Jan 31, 2011
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Abstract
The use of doped silicon nanoparticle inks and other liquid dopant sources can provide suitable dopant sources for driving dopant elements into a crystalline silicon substrate using a thermal process if a suitable cap is provided. Suitable caps include, for example, a capping slab, a cover that may or may not rest on the surface of the substrate and a cover layer. Desirable dopant profiled can be achieved. The doped nanoparticles can be delivered using a silicon ink. The residual silicon ink can be removed after the dopant drive-in or at least partially densified into a silicon material that is incorporated into the product device. The silicon doping is suitable for the introduction of dopants into crystalline silicon for the formation of solar cells.
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