Cold field electron emitters based on silicon carbide structures
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United States of America Patent
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Dec 9, 2014
Grant Date -
Jul 25, 2013
app pub date -
Aug 8, 2012
filing date -
Jan 24, 2012
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Abstract
A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.
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