Power semiconductor device
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United States of America Patent
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Dec 2, 2014
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N/A
app pub date -
Nov 7, 2013
filing date -
Dec 12, 2012
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Abstract
A power semiconductor device is provided, which can prevent an electric field from concentrating on a diode region, and can improve a breakdown voltage by creating an impurity concentration gradient in the diode region to increase from a termination region to an active cell region to cause reverse current to be distributed to the active cell region.
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