Method for doping a semiconductor material
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United States of America Patent
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Dec 2, 2014
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N/A
app pub date -
Jul 1, 2011
filing date -
Jul 16, 2010
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Abstract
A feedstock of semiconductor material is placed in a crucible. A closed sacrificial recipient containing a dopant material is placed in the crucible. The content of the crucible is melted resulting in incorporation of the dopant in the molten material bath. The temperature increase is performed under a reduced pressure.
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