III nitride structure and method for manufacturing III nitride semiconductor fine columnar crystal
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 25, 2014
Issued Date -
N/A
app pub date -
Aug 27, 2008
filing date -
Sep 3, 2007
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A III nitride structure includes a film 108 having a surface composed of a metal formed in a predetermined region on the surface of a substrate 102, and a fine columnar crystal 110 composed of at least a III nitride semiconductor formed on the surface of the substrate 102, wherein the spatial occupancy ratio of the fine columnar crystal 110 is higher on the surface of the substrate 102 where the film 108 is not formed than that on the film.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully