Integrated circuit including sidewall spacer
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United States of America Patent
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Nov 25, 2014
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app pub date -
Apr 19, 2006
filing date -
Apr 19, 2006
priority date (Note) -
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Abstract
A memory cell includes a first electrode, a second electrode, a layer of phase change material extending from a first contact with the first electrode to a second contact with the second electrode, and a sidewall spacer contacting the second electrode and a sidewall of the layer of phase change material adjacent to the second contact.
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