Method of making a semiconductor device comprising a land grid array flip chip bump system with short bumps
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United States of America Patent
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Nov 25, 2014
Issued Date -
N/A
app pub date -
Mar 29, 2012
filing date -
Mar 31, 2011
priority date (Note) -
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Abstract
A semiconductor device has a semiconductor wafer with a plurality of semiconductor die including a plurality of contact pads. An insulating layer is formed over the semiconductor wafer and contact pads. An under bump metallization (UBM) is formed over and electrically connected to the plurality of contact pads. A mask is disposed over the semiconductor wafer with a plurality of openings aligned over the plurality of contact pads. A conductive bump material is deposited within the plurality of openings in the mask and onto the UBM. The mask is removed. The conductive bump material is reflowed to form a plurality of bumps with a height less than a width. The plurality of semiconductor die is singulated. A singulated semiconductor die is mounted to a substrate with bumps oriented toward the substrate. Encapsulant is deposited over the substrate and around the singulated semiconductor die.
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