Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material
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United States of America Patent
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Nov 25, 2014
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Sep 11, 2014
app pub date -
Mar 11, 2013
filing date -
Mar 11, 2013
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Abstract
Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.
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