Heterogeneous semiconductor photonic integrated circuit with multiple offset heights
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United States of America Patent
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Nov 18, 2014
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Jul 11, 2012
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Jul 11, 2012
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Abstract
Embodiments of the invention describe heterogeneous photonic integrated circuits (PIC) wherein a first silicon region is separated from the heterogeneous semiconductor material by a first distance, and a second silicon region is separated from the heterogeneous semiconductor material by a second distance greater than the first distance.
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