Integrated nano-farad capacitors and method of formation
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United States of America Patent
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Nov 18, 2014
Grant Date -
Dec 2, 2010
app pub date -
May 27, 2010
filing date -
May 29, 2009
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Abstract
A high value capacitance per unit area capacitor is fabricated on a substrate 1 by converting a portion of a primary function anti-reflecting conducting layer 36 to a high value dielectric layer 37 by partially oxidizing the conducting layer to form the dielectric layer. The resultant combination is sandwiched between two metal layer electrodes 35 and 55 to complete the capacitor structure.
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