Method for manufacturing a memory cell, a method for manufacturing a memory cell arrangement, and a memory cell
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United States of America Patent
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Nov 11, 2014
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app pub date -
Oct 8, 2012
filing date -
Oct 8, 2012
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Abstract
A method for manufacturing a memory cell in accordance with various embodiments may include: forming at least one charge storing memory cell structure over a substrate, the charge storing memory cell structure having a first sidewall and a second sidewall opposite the first sidewall; forming an electrically conductive layer over the substrate and the charge storing memory cell structure; patterning the electrically conductive layer to form a spacer at the first sidewall and a blocking structure at the second sidewall of the charge storing memory cell structure; implanting first dopant atoms to form a first doped region in the substrate proximate the spacer, wherein the first dopant atoms are blocked by the blocking structure; removing the blocking structure after implanting the first dopant atoms; implanting second dopant atoms to form a second doped region in the substrate proximate the second sidewall of the charge storing memory cell structure.
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