Irradiation assisted nucleation of quantum confinements by atomic layer deposition
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United States of America Patent
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Nov 11, 2014
Issued Date -
N/A
app pub date -
Jun 11, 2013
filing date -
Mar 24, 2010
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.
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International Classification(s)
- 2013 Application Filing Year
- C08J Class
- 1321 Applications Filed
- 1140 Patents Issued To-Date
- 86.30 % Issued To-Date
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- 0 Citation Count
- C08J Class
- 0 % this patent is cited more than
- 11 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | May 11, 2026 |
