Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
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United States of America Patent
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Nov 4, 2014
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Nov 12, 2009
app pub date -
Nov 9, 2006
filing date -
Nov 9, 2006
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Abstract
Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.
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