Semiconductor die singulation method

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United States of America Patent

PATENT NO 8871613
APP PUB NO 20130337633A1
SERIAL NO

13526140

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Abstract

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In one embodiment, semiconductor die are singulated from a semiconductor wafer by forming trenches along singulation lines and initiating a cracks from within the trenches, which propagate through the semiconductor wafer in a more controlled manner.

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Patent Owner(s)

Patent OwnerAddress
DEUTSCHE BANK AG NEW YORK BRANCH AS COLLATERAL AGENT60 WALL STREET NEW YORK NY 10005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Seddon, Michael J Gilbert, US 194 1154

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