Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structure
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United States of America Patent
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Oct 28, 2014
Grant Date -
May 15, 2014
app pub date -
Jan 21, 2014
filing date -
Apr 14, 2011
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Abstract
Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.
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