EUVL process structure fabrication methods

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United States of America Patent

PATENT NO 8865376
SERIAL NO

13790288

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Abstract

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Methods are provided for fabricating a process structure, such as a mask or mask blank. The methods include, for instance: providing a silicon substrate; forming a multi-layer, extreme ultra-violet lithography (EUVL) structure over the silicon substrate; subsequent to forming the multi-layer EUVL structure over the crystalline substrate, reducing a thickness of the silicon substrate; and attaching a low-thermal-expansion material (LTEM) substrate to one of the multi-layer EUVL structure, or the reduced silicon substrate. In one implementation, the silicon substrate is a silicon wafer with a substantially defect-free surface upon which the multi-layer EUVL structure is formed. The multi-layer EUVL structure may include multiple bi-layers of a first material and a second material, as well as a capping layer, and optionally, an absorber layer, where the absorber layer is patternable to facilitating forming a EUVL mask from the process structure.

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Patent Owner(s)

Patent OwnerAddress
INTEL CORPORATION2200 MISSION COLLEGE BOULEVARD SANTA CLARA CA 95054
SEMATECH INC2706 MONTOPOLIS DRIVE AUSTIN TX 78741

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Goodwin, Frank Halfmoon, US 3 15
Jindal, Vibhu Niskayuna, US 83 312
Kearney, Patrick A Wynantskill, US 3 11
Panning, Eric M Hillsboro, US 5 13

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