Reading/writing control method and system for nonvolatile memory storage device
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United States of America Patent
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Oct 14, 2014
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app pub date -
Jul 19, 2010
filing date -
Oct 23, 2009
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Abstract
The present invention is adapted to data storage technology field, and provides a reading/writing control method and system for nonvolatile memory, the method including the following steps: dividing valid blocks in the nonvolatile memory into different zones, the zones including at least one data zone having fixed number of valid blocks and one exchange zone having at least two valid blocks; creating a mapping table of logic blocks and physical blocks in each zone; establishing a mapping table of logic pages and physical pages in the blocks based on redundant area information of pages in the blocks, and storing the mapping table of the logic blocks and physical blocks in each zone and the mapping table of logic pages and physical pages in each block in a private data area; and writing data segments in an idle page of the blocks of the data zones in sequence, or reading data segments from valid pages in the data zones, thus the data reading/writing speed and efficiency is promoted.
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