PIN diode

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United States of America Patent

PATENT NO 8860189
APP PUB NO 20120299163A1
SERIAL NO

13520357

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Abstract

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Provided is a PIN diode that can suppress thermal destruction from occurring at the time of a reverse bias exceeding a breakdown voltage by current concentration on a curved part of an anode region. The PIN diode is configured to have: a semiconductor substrate 11 that includes an N+ semiconductor layer 1 and an N− semiconductor layer 2; a cathode electrode 18 that is formed on an outer surface of the N+ semiconductor layer 1; a main anode region 16, a separated anode region 15, and an anode connecting region that are formed by selectively diffusing P-type impurities from an outer surface of the N− semiconductor layer 2; and an anode electrode 17 that is formed on the main anode region 16.

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Patent Owner(s)

Patent OwnerAddress
SANSHA ELECTRIC MANUFACTURING CO LTDOSAKA 533-0031

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nishimura, Yoshikazu Osaka, JP 60 493
Uchino, Takeyoshi Osaka, JP 2 9
Yamamoto, Hirofumi Osaka, JP 141 760

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