Neutron detection using GD-loaded oxide and nitride heterojunction diodes
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United States of America Patent
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Oct 14, 2014
Grant Date -
Jan 10, 2013
app pub date -
Jul 5, 2012
filing date -
Jul 7, 2011
priority date (Note) -
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Abstract
Solid state neutron detection utilizing gadolinium as a neutron absorber is described. The new class of narrow-gap neutron-absorbing semiconducting materials, including Gd-doped HfO2, Gd-doped EuO, Gd-doped GaN, Gd2O3 and GdN are included in three types of device structures: (1) a p-n heterostructure diode with a ˜30 μm Gd-loaded semiconductor grown on a conventional semiconductor (Si or B-doped Si); (2) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron one side and single-crystal semiconducting Li2B4O7 layer on the other side of the heterojunction; and (3) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron on one side and a boron nitride (BN) semiconductor layer on the other side of the heterojunction.
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- 1 Citation Count
- H01L Class
- 7.09 % this patent is cited more than
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