Method of growing gan crystal on silicon substrate, and light emitting device and method of manufacturing thereof
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United States of America Patent
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Oct 14, 2014
Grant Date -
Nov 20, 2008
app pub date -
Feb 29, 2008
filing date -
May 17, 2007
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Abstract
Example embodiments are directed to a method of growing GaN single crystals on a silicon substrate, a method of manufacturing a GaN-based light emitting device using the silicon substrate, and a GaN-based light emitting device. The method of growing the GaN single crystals may include forming a buffer layer including a TiN group material or other like material on a silicon substrate, forming a nano-pattern including silicon oxide on the buffer layer, and growing GaN single crystals on the buffer layer and the nano-pattern.
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