Thin-film piezoelectric resonator and thin-film piezoelectric filter using the same

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United States of America Patent

PATENT NO 8854156
APP PUB NO 20110298564A1
SERIAL NO

13202442

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A thin-film piezoelectric resonator including a substrate (6); a piezoelectric layer (2), a piezoelectric resonator stack (12) with a top electrode (10) and bottom electrode (8), and a cavity (4). The piezoelectric resonator stack (12) has a vibration region (40) where the top electrode and bottom electrode overlap in the thickness direction, and the vibration region comprises a first vibration region, second vibration region, and third vibration region. When seen from the thickness direction, the first vibration region is present at the outermost side, the third vibration region is present at the innermost side and does not contact the first vibration region, and the second vibration region is interposed between the first vibration region and third vibration region. The resonance frequency of the primary thickness-longitudinal vibration of the vibration region (40) is f1 at the first vibration region, is f2 at the third vibration region, wherein f1 and f2 satisfy a relationship of f12, and is a value between f1 and f2 at the second vibration region, said value increasing from the outer portion contacting the first vibration region to the inner portion contacting the third vibration region.

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MEMS SOLUTION CO LTD4F INSTITUTE OF ADVANCED ENGINEERING 175-28 GOANRO 51 BAEKAMMYEON CHEOINGU YONGIN CITY KYUNGGIDO 449-863

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iwashita, Kazuki Yamaguchi, JP 12 154
Maruyama, Takuya Yamaguchi, JP 27 155
Tanaka, Kensuke Yamaguchi, JP 30 243
Tsuchiya, Hiroshi Yamaguchi, JP 112 1175

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