Methods for producing GaN nutrient for ammonothermal growth
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United States of America Patent
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Oct 7, 2014
Grant Date -
May 27, 2010
app pub date -
Nov 23, 2009
filing date -
Nov 24, 2008
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Abstract
The present invention discloses methods to produce large quantities of polycrystalline GaN for use in the ammonothermal growth of group III-nitride material. High production rates of GaN can be produced in a hydride vapor phase growth system. One drawback to enhanced polycrystalline growth is the increased incorporation of impurities, such as oxygen. A new reactor design using non-oxide material that reduces impurity concentrations is disclosed. Purification of remaining source material after an ammonothermal growth is also disclosed. The methods described produce sufficient quantities of polycrystalline GaN source material for the ammonothermal growth of group III-nitride material.
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