Surface-emitting semiconductor light-emitting diode
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United States of America Patent
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Sep 30, 2014
Grant Date -
Jan 31, 2013
app pub date -
Mar 31, 2011
filing date -
Apr 1, 2010
priority date (Note) -
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Abstract
The invention is directed to a surface emitting semiconductor light-emitting diode (LED) in which a reflector layer (4) of the first conductivity type is provided between a substrate (2) and a first barrier layer (5). A first contact layer (9) has at least one emitting surface (13) via which radiation emitted by an active layer (6) exits the LED. The emitting surfaces (13) are electrically and optically isolated from one another by surface implanted regions (11) in the first contact layer (9) which are irradiated with electric charge carriers. The areas of the layers located below the emitting surface (13) starting from the first contact layer (9) and proceeding as far as at least through the active layer (6) are electrically and optically isolated with respect to areas of the layers not located below the emitting surface (13) by means of first deep implanted regions (12.1) irradiated with electric charge carriers.
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