Self-aligned and lateral-assembly method for integrating heterogeneous material structures on the same plane
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 30, 2014
Grant Date -
N/A
app pub date -
Aug 26, 2013
filing date -
Aug 2, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention relates to a self-aligned and lateral-assembly method for integrating heterogeneous material structures on the same plane. By using this method, two semiconductor materials heterogeneous to each other can be laterally assembled in a self-alignment way, without using any epitaxial buffer layers or gradient buffer layers. Therefore, when applying this method to fabricating an electronic device having heterojunction, not only the manufacture cost can be effectively reduced, but the difficulty of manufacturing process can also be overcome. Moreover, in this method, one amorphous heterogeneous semiconductor material would laterally grow to a crystal semiconductor material through epitaxy after being treated the rapid melting growth (RMG) process, and the epitaxial crystal semiconductor material would then be laterally assembled with the other one semiconductor material on an identical substrate, for carrying out the lateral assembly of the two heterogeneous semiconductor materials by using the self-alignment way and the smallest thermal budget.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully