Reversible write-protection for non-volatile semiconductor memory device

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United States of America Patent

PATENT NO 8843695
APP PUB NO 20130117499A1
SERIAL NO

13310735

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Abstract

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A serial memory device having a non-volatile memory array including a plurality of memory blocks, one or more said plurality of blocks being capable of being placed in a locked or an unlocked state upon receiving designated lock or unlock signal sequences is provided. The unlock signal sequences comprises at least two sequential signal sequences: a first unlock sequence, which has 1 to 7 signal bits, is applied to one of address input pins or a logic low enabled write-protection input pin and a second unlock sequence follows the first unlock signal sequence and is applied to a serial data access pin. The memory device further comprising a control logic circuit block coupled to a write-protection circuit block to provide means to identify the designated lock and unlock signal sequences and to set a protection state in a security area.

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Patent Owner(s)

Patent OwnerAddress
GIANTEC SEMICONDUCTOR LTD INCNO 12 LANE 647 SONGTAO ROAD ZHANGJIANG HI-TECH PARK PUDONG NEW DISTRICT SHANGHAI 201203 201203

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hao, Qingshan Shanghai, CN 2 9
Shao, Dan Shanghai, CN 20 80
Xu, Hongru Shanghai, CN 10 30

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