Plasma etching apparatus

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United States of America Patent

PATENT NO 8834674
APP PUB NO 20100300623A1
SERIAL NO

12787948

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Abstract

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According to one embodiment, a plasma etching apparatus includes an electrode to which a high-frequency voltage is applied, having an upper surface along which a processing target substrate is to be placed, and having an inclined side, and an electrode cover provided along the side of the electrode.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATION1-21 SHIBAURA 3-CHOME MINATO-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Azumano, Hidehito Yokohama, JP 8 55
Motokawa, Takeharu Zushi, JP 23 78

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