Planar mirco-tube discharger structure and method for fabricating the same

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United States of America Patent

PATENT NO 8829775
APP PUB NO 20130221834A1
SERIAL NO

13464506

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Abstract

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The present invention discloses a semiconductor-based planar micro-tube discharger structure and a method for fabricating the same. The method comprises steps: forming on a substrate two patterned electrodes separated by a gap and at least one separating block arranged in the gap; forming an insulating layer over the patterned electrodes and the separating block and filling the insulating layer into the gap. Thereby are formed at least two discharge paths. The method can fabricate a plurality discharge paths in a semiconductor structure. Therefore, the structure of the present invention has very high reliability and reusability.

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Patent Owner(s)

Patent OwnerAddress
AMAZING MICROELECTRONIC CORP18F NO 2 JIAN 8TH RD ZHONGHE DIST NEW TAIPEI CITY 235

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Tung-Yang Hsinchu County, TW 38 516
Jiang, Ryan Hsin-Chin Taipei, TW 46 403
Ker, Ming-Dou Hsinchu County, TW 284 4774

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