Production of single-crystal semiconductor material using a nanostructure template

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United States of America Patent

PATENT NO 8828849
SERIAL NO

12307266

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A method of producing single-crystal semiconductor material comprises: providing a template material; creating a mask on top of the template material; using the mask to form a plurality of nanostructures in the template material; and growing the single-crystal semiconductor material onto the nanostructures.

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Patent Owner(s)

Patent OwnerAddress
QUANTUM NIL TECHNOLOGY PTE LTD138 CECIL STREET #13-02 CECIL COURT SINGAPORE 069538
QUANTUM NIL CORPORATION3F -3 NO 35 GANGU ST DATONG DIST TAIPEI CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wang, Wang Nang Bath, GB 27 507

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