Method for a single precursor ionic exchange to prepare semiconductor nanocrystal n-type thermoelectric material

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United States of America Patent

PATENT NO 8828774
SERIAL NO

13866593

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Abstract

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Herein disclosed is a method of forming a thermoelectric material having an optimized stoichiometry, the method comprising: reacting a precursor material including a population of nanocrystals with a first ionic solution and a second ionic solution to form a reacted mixture.

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Patent Owner(s)

Patent OwnerAddress
EVIDENT TECHNOLOGIES INC45 FERRY STREET TROY NY 12180

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ballinger, Clinton T Ballston Spa, US 29 260
Peng, Adam Z Guilderland, US 13 8
Perera, Susanthri Latham, US 16 93
Socha, Dave Glenmont, US 3 4

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