Semiconductor device and method of manufacturing the same
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United States of America Patent
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Sep 2, 2014
Grant Date -
Aug 25, 2011
app pub date -
Jan 31, 2011
filing date -
Feb 25, 2010
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Abstract
A semiconductor device according to example embodiments may include a channel including a nanowire and a charge storage layer including nanoparticles. A twin gate structure including a first gate and a second gate may be formed on the charge storage layer. The semiconductor device may be a memory device or a diode.
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