Method to reduce depth delta between dense and wide features in dual damascene structures
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United States of America Patent
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Sep 2, 2014
Grant Date -
Jul 5, 2012
app pub date -
Dec 30, 2010
filing date -
Dec 30, 2010
priority date (Note) -
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Abstract
A method of forming a device is disclosed. The method includes providing a substrate prepared with a dielectric layer having first and second regions. The first region comprises wide features and the second region comprises narrow features. A depth delta exists between bottoms of the wide and narrow features. A non-conformal layer is formed on the substrate and it lines the wide and narrow trenches in the first and second regions. The non-conformal layer is removed. Removing the non-conformal layer reduces the depth delta between the bottoms of the wide and narrow features in the first and second region.
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