Nitride-based light emitting device with excellent light emitting efficiency using strain buffer layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 26, 2014
Grant Date -
Jul 4, 2013
app pub date -
Dec 26, 2012
filing date -
Dec 30, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The nitride-based light emitting device according to one embodiment includes a first nitride semiconductor layer doped with a first conductive impurity; a strain buffer layer formed on the first nitride semiconductor layer and comprised of InGaN; an active layer formed on the strain buffer layer and having a multi-quantum well structure in which a quantum-well layer and a quantum-barrier layer are alternately stacked one above another; and a second nitride semiconductor layer formed on the active layer and doped with a second conductive impurity opposite to the first conductive impurity, wherein the ratio B/A satisfies 1.4
Recipient Email Address Recipient Email Address Comment Recipient Email Address To add this patent to one, or more, of
your portfolios, simply click the add button. This Patent is in these Portfolios: Add to additional portfolios: Last Refreshed On:
Changes done successfully
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Add to Portfolio(s)
