Silicon epitaxial wafer and method for production thereof
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United States of America Patent
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Aug 26, 2014
Grant Date -
Feb 10, 2011
app pub date -
Apr 17, 2009
filing date -
Jun 10, 2008
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Abstract
Disclosed is a wafer having a good haze level in spite of the fact that the inclination angle of {110} plane in the wafer is small. Also disclosed is a method for producing a silicon epitaxial wafer, which comprises the steps of: growing an epitaxial layer on a silicon single crystal substrate having a main surface of {110} plane of which an off-angle is less than 1 degree; and polishing the surface of the epitaxial layer until the surface of the epitaxial layer has a haze level of 0.18 ppm or less (as measured by SP2 at a DWO mode).
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