Sequential electrostatic discharge (ESD)-protection employing cascode NMOS triggered structure
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United States of America Patent
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Aug 19, 2014
Grant Date -
Jun 20, 2013
app pub date -
Jun 29, 2012
filing date -
Jul 1, 2011
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Abstract
An Electrostatic Discharge (ESD) protection circuitry comprises a protection device structure. The protection device structure includes at least one transistor with a gate operably connected to a pad. The at least one transistor turns on upon an ESD event and conducting charge to a substrate. At least one additional transistor with a gate operably connected to the substrate turns on after the at least one transistor upon an ESD protection event.
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