Lightly doped silicon carbide wafer and use thereof in high power devices
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United States of America Patent
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Aug 12, 2014
Grant Date -
Apr 19, 2012
app pub date -
Dec 29, 2011
filing date -
Aug 30, 2002
priority date (Note) -
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Abstract
A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns.
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